Photoelectric properties of ordered-vacancy Ga2Se3 single crystals

Bletskan, D. I.; Блеткан, Д. І.; Kabatsii, V. N.; Кабацій, Василь Миколайович; Kranjcec, M.; Кранчець, М.

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dc.contributor.author	Bletskan, D. I.
dc.contributor.author	Блеткан, Д. І.
dc.contributor.author	Kabatsii, V. N.
dc.contributor.author	Кабацій, Василь Миколайович
dc.contributor.author	Kranjcec, M.
dc.contributor.author	Кранчець, М.
dc.date.accessioned	2020-06-19T08:52:16Z
dc.date.available	2020-06-19T08:52:16Z
dc.date.issued	2010
dc.identifier.uri	http://dspace.msu.edu.ua:8080/jspui/handle/123456789/6838
dc.description	Bletskan D. I. Photoelectric properties of ordered-vacancy Ga2Se3 single crystals / D. I. Bletskan, V. N. Kabatsii, M. Kranjcec // Inorganic Materials, 2010, Vol. - 46, No. - 12, P.1290–1295	en_US
dc.description.abstract	We have studied the photoconductivity spectrum, thermally stimulated current, current–light characteristics, and temperaturedependent photocurrent in Bridgmangrown orderedvacancy Ga2Se3 crystals. The observed temperature quenching of photoconductivity and two regions of its thermal activation in Ga2Se3 crystals are interpreted in terms of a multicenter recombination model which incorporates an schannel of active recombination, rcenters of photosensitivity, and traps for nonequilibrium majority carriers.	en_US
dc.language.iso	en	en_US
dc.publisher	Pleiades Publishing	en_US
dc.subject	cation vacancy	en_US
dc.subject	photoelectric property	en_US
dc.subject	luminous flux	en_US
dc.subject	thermally stimulate current	en_US
dc.subject	native point defect	en_US
dc.subject	вакансія катіона	en_US
dc.subject	фотоелектрична властивість	en_US
dc.subject	світловий потік	en_US
dc.subject	термічно стимулюючий струм	en_US
dc.subject	родний дефект	en_US
dc.title	Photoelectric properties of ordered-vacancy Ga2Se3 single crystals	en_US
dc.type	Article	en_US