Concentration profiles of elements and structure of a-Si1-xNx:H films

dc.contributor.author	Gerasimov, Vitaliy
dc.contributor.author	Герасимов, Віталій Вікторович
dc.contributor.author	Mitsa, Vladimir
dc.contributor.author	Мица, Володимир
dc.date.accessioned	2020-03-24T12:27:28Z
dc.date.available	2020-03-24T12:27:28Z
dc.date.issued	1997
dc.identifier.uri	http://dspace.msu.edu.ua:8080/jspui/handle/123456789/5237
dc.description	Gerasimov V. Concentration profiles of elements and structure of a-Si1-xNx:H films / V. Gerasimov, V. Mitsa // Fizika A, 1997. - vol. 6. - Issue 1. - С. 61-66	en_US
dc.description.abstract	SIMS profiles of a-Si1-xNx:H films having different composition have been measured. The distribution of hydrogen in nitrided films bears a fluctuating character and its whole content decreases at x < 0.06. In all films, Na impurity is observed and its content on the film surface exceeds that of all other components. In the region of small contents of nitrogen, the position of the absorption edge in a-Si1-xNx:H films does not change with respect to its position in a-Si:H. According to the analysis of IR spectra of a-Si1-xNx:H near Si-N bonds, different surroundings are realized.	en_US
dc.language.iso	en	en_US
dc.publisher	Fizika A	en_US
dc.title	Concentration profiles of elements and structure of a-Si1-xNx:H films	en_US
dc.type	Article	en_US