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dc.contributor.author Кабацій, Василь Миколайович
dc.contributor.author Блецкан, Д.И.
dc.contributor.author Вакульчак, В.В.
dc.contributor.author Kabatsii, V.M.
dc.contributor.author Bletskan, D.І.
dc.contributor.author Vakulchak, V.V.
dc.date.accessioned 2017-11-17T08:45:55Z
dc.date.available 2017-11-17T08:45:55Z
dc.date.issued 2015
dc.identifier.uri http://dspace.msu.edu.ua:8080/jspui/handle/123456789/385
dc.description Bletskan, D. I.Elektronic Structure of Sodium Thiogermanate / D. I. Bletskan, V. V. Vakulchak, V. M. Kabatsii // Open Journal of Inorganic Non-Metallic Materials. - 2015. - №5. - С.31-39 en_US
dc.description.abstract Ab initio calculations of the band structure, total and partial densities of states and the spatial distribution of the electron charge density of crystalline Na2GeS3 are performed in the framework of density functional theory in the local density approximation for an exchange-correlation potential. According to the calculation results, sodium thiogermanate is a direct-gap crystal with the top of the valence band and the bottom of the conduction band at the . point of the Brillouin zone. The calculated band gap is Eg = 2.51 eV. The nature of the components of the electronic states in different subbands of the valence band is determined. The calculated total density of states in the valence band of the crystal is compared with the known experimental X-ray photoelectron spectrum of Na2GeS3 glass. Based on the maps of the electron density distribution, the nature of thechemical bonds and high mobility of Na+ ions in Na2GeS3 crystal is analyzed. en_US
dc.language.iso en en_US
dc.relation.ispartofseries ;№5
dc.subject sodium thiogermanate en_US
dc.subject electronic structure en_US
dc.subject density of states en_US
dc.subject electron charge density en_US
dc.title Elektronic Structure of Sodium Thiogermanate en_US
dc.type Article en_US


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Показати скорочений опис матеріалу