Короткий опис(реферат):
This paper describes an automated- measurement system of dielectric hysteresis loops, with the ability to measure the parameters of ferroelectric memory cells, both standard properties such as spontaneous polarization, coercive field, bias voltage, as well as such features as switching speed and cell aging. Software control allows not only to automate of the measurement process but also to simulate of the data obtained in order to compensate for conductivity and parasitic capacitance. With its use, the possibility of creating multi-bit ferroelectric memory cells was discovered, which makes it possible to create information storage subsystems of higher density.
Суть розробки, основні результати:
Gal David Research and Simulation System for ferroelectric Multibit Memory Cells / Gal David, Ban Henrietta, Gerasimov Vitaly, Haysak Andriy, Molnar Alexander, Tretiakova Taisiy // The crossing point of Intelligent Data Acquisition & Advanced Computing Systems and East & West Scientists : proceedings of the 12th IEEE International Conference of Intelligent Data Acquisition and dvanced Computing Systems: Technology and Applications (IDAACS)(Dortmund, Germany, September 7-9, 2023). - Dortmund, Germany, 2023. - Vol. 1: IDAACS'2023. - P. 163-168.
