Research and Simulation System for Ferroelectric Multibit Memory Cells

Abstract

This paper describes an automated- measurement system of dielectric hysteresis loops, with the ability to measure the parameters of ferroelectric memory cells, both standard properties such as spontaneous polarization, coercive field, bias voltage, as well as such features as switching speed and cell aging. Software control allows not only to automate of the measurement process but also to simulate of the data obtained in order to compensate for conductivity and parasitic capacitance. With its use, the possibility of creating multi-bit ferroelectric memory cells was discovered, which makes it possible to create information storage subsystems of higher density.