Перегляд по темі "InAsSbP"

Сортувати по: Порядок: Рузультати:

  • Sukach, G.A.; Bogoslovskaya, A.B.; Oleksenko, P.F.,; Bilynets, Yu.Yu; Kabacij, V.N.; Кабацій, Василь Миколайович (2000)
    We investigated IR-emitting diodes (IREDs) based on the lattice-mismatched structures with stressed InGaAs/InAs layers and on near-matched InAsSbP/InAs structures. The emission wavelength range was from 2.5 to 5.0 lm. Both ...