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Ezzel az azonosítóval hivatkozhat erre a dokumentumra forrásmegjelölésben vagy hiperhivatkozás esetén:
http://dspace.msu.edu.ua:8080/jspui/handle/123456789/6838Összes dokumentumadat
| DC mező | Érték | Nyelv |
|---|---|---|
| dc.contributor.author | Bletskan, D. I. | - |
| dc.contributor.author | Блеткан, Д. І. | - |
| dc.contributor.author | Kabatsii, V. N. | - |
| dc.contributor.author | Кабацій, Василь Миколайович | - |
| dc.contributor.author | Kranjcec, M. | - |
| dc.contributor.author | Кранчець, М. | - |
| dc.date.accessioned | 2020-06-19T08:52:16Z | - |
| dc.date.available | 2020-06-19T08:52:16Z | - |
| dc.date.issued | 2010 | - |
| dc.identifier.uri | http://dspace.msu.edu.ua:8080/jspui/handle/123456789/6838 | - |
| dc.description | Bletskan D. I. Photoelectric properties of ordered-vacancy Ga2Se3 single crystals / D. I. Bletskan, V. N. Kabatsii, M. Kranjcec // Inorganic Materials, 2010, Vol. - 46, No. - 12, P.1290–1295 | en_US |
| dc.description.abstract | We have studied the photoconductivity spectrum, thermally stimulated current, current–light characteristics, and temperaturedependent photocurrent in Bridgmangrown orderedvacancy Ga2Se3 crystals. The observed temperature quenching of photoconductivity and two regions of its thermal activation in Ga2Se3 crystals are interpreted in terms of a multicenter recombination model which incorporates an schannel of active recombination, rcenters of photosensitivity, and traps for nonequilibrium majority carriers. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Pleiades Publishing | en_US |
| dc.subject | cation vacancy | en_US |
| dc.subject | photoelectric property | en_US |
| dc.subject | luminous flux | en_US |
| dc.subject | thermally stimulate current | en_US |
| dc.subject | native point defect | en_US |
| dc.subject | вакансія катіона | en_US |
| dc.subject | фотоелектрична властивість | en_US |
| dc.subject | світловий потік | en_US |
| dc.subject | термічно стимулюючий струм | en_US |
| dc.subject | родний дефект | en_US |
| dc.title | Photoelectric properties of ordered-vacancy Ga2Se3 single crystals | en_US |
| dc.type | Article | en_US |
| Ebben a gyűjteményben: | Статті | |
Fájlok a dokumentumban:
| Fájl | Leírás | Méret | Formátum | |
|---|---|---|---|---|
| Photoelectric_properties_of-ordered-vacancy_Ga2Se3_single_crystals.pdf | Photoelectric properties of ordered-vacancy Ga2Se3 single crystals | 670.89 kB | Adobe PDF | Megtekintés/Megnyitás |
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