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dc.contributor.authorКабацій, Василь Миколайович-
dc.contributor.authorБлецкан, Д.І.-
dc.contributor.authorКранічець, М.-
dc.contributor.authorФролова, В.В.-
dc.contributor.authorГуль, Е.Г.-
dc.contributor.authorKabatsii, V.M-
dc.contributor.authorBletskan, D.I.-
dc.contributor.authorKranichets, M.-
dc.contributor.authorFrolova, V.V.-
dc.contributor.authorGule, E.G.-
dc.date.accessioned2017-11-17T09:03:59Z-
dc.date.available2017-11-17T09:03:59Z-
dc.date.issued2006-
dc.identifier.urihttp://dspace.msu.edu.ua:8080/jspui/handle/123456789/387-
dc.descriptionPhotoconductivity and Photoluminescence of PbGa2Se4 Crystals / D. I. Bletskan, V. M. Kabatsii, M. Kranichets [et al.] // Chalcogenide Letters. - 2006. - Vol.3№12. - P.125-132.en_US
dc.description.abstractThere were carried out complex researches of electrical conductivity, thermo-stimulated current, photoconduction and photoluminescence spectra and dependence on temperature of the stationary photoconductivity, in the range 100 ÷ 500 K for the ternary crystal PbGa2Se4. There were evidenced two types of slow recombination centres (r- and m-) and two capture centres, and their parameters were determined: concentration and position in the gap).en_US
dc.language.isoenen_US
dc.relation.ispartofseries;Vol.3№12-
dc.subjectPbGa2Se4 single crystalen_US
dc.subjectphotoconductivityen_US
dc.subjectphotoluminescenceen_US
dc.subjectrecombination centresen_US
dc.subjectcapture centresen_US
dc.titlePhotoconductivity and Photoluminescence of PbGa2Se4 Crystalsen_US
dc.typeArticleen_US
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