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dc.contributor.authorBletskan, D. I.-
dc.contributor.authorБлеткан, Д. І.-
dc.contributor.authorKabatsii, V. N.-
dc.contributor.authorКабацій, Василь Миколайович-
dc.contributor.authorKranjcec, M.-
dc.contributor.authorКранчець, М.-
dc.date.accessioned2020-06-19T08:52:16Z-
dc.date.available2020-06-19T08:52:16Z-
dc.date.issued2010-
dc.identifier.urihttp://dspace.msu.edu.ua:8080/jspui/handle/123456789/6838-
dc.descriptionBletskan D. I. Photoelectric properties of ordered-vacancy Ga2Se3 single crystals / D. I. Bletskan, V. N. Kabatsii, M. Kranjcec // Inorganic Materials, 2010, Vol. - 46, No. - 12, P.1290–1295en_US
dc.description.abstractWe have studied the photoconductivity spectrum, thermally stimulated current, current–light characteristics, and temperaturedependent photocurrent in Bridgmangrown orderedvacancy Ga2Se3 crystals. The observed temperature quenching of photoconductivity and two regions of its thermal activation in Ga2Se3 crystals are interpreted in terms of a multicenter recombination model which incorporates an schannel of active recombination, rcenters of photosensitivity, and traps for nonequilibrium majority carriers.en_US
dc.language.isoenen_US
dc.publisherPleiades Publishingen_US
dc.subjectcation vacancyen_US
dc.subjectphotoelectric propertyen_US
dc.subjectluminous fluxen_US
dc.subjectthermally stimulate currenten_US
dc.subjectnative point defecten_US
dc.subjectвакансія катіонаen_US
dc.subjectфотоелектрична властивістьen_US
dc.subjectсвітловий потікen_US
dc.subjectтермічно стимулюючий струмen_US
dc.subjectродний дефектen_US
dc.titlePhotoelectric properties of ordered-vacancy Ga2Se3 single crystalsen_US
dc.typeArticleen_US
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