Effect of Nonstoichiometry and Doping on the Photoconductivity Spectra of GeSe Layered Crystals

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DC Element	Wert	Sprache
dc.contributor.author	Bletskan, D.I.	-
dc.contributor.author	Madyar, J.J.	-
dc.contributor.author	Kabaciy, V.N.	-
dc.contributor.author	Кабацій, Василь Миколайович	-
dc.date.accessioned	2017-11-17T12:27:13Z	-
dc.date.available	2017-11-17T12:27:13Z	-
dc.date.issued	2006	-
dc.identifier.uri	http://dspace.msu.edu.ua:8080/jspui/handle/123456789/396	-
dc.description	Bletskan, D. I. Effect of Nonstoichiometry and Doping on the Photoconductivity Spectra of GeSe Layered Crystals / D. I. Bletskan, J. J. Madyar, V. N. Kabaciy // Semiconductors. - 2006. - Vol.40. No 2. - P.142-147	en_US
dc.description.abstract	The polarization photoconductivity spectra of Bi-doped nonstoichiometric GeSe layered crystals grown by static sublimation were investigated.	en_US
dc.language.iso	en	en_US
dc.relation.ispartofseries	;Vol.40, No 2	-
dc.subject	Nonstoichiometry	en_US
dc.subject	Doping	en_US
dc.subject	Photoconductivity Spectra	en_US
dc.subject	Layered Crystals	en_US
dc.title	Effect of Nonstoichiometry and Doping on the Photoconductivity Spectra of GeSe Layered Crystals	en_US
dc.type	Article	en_US
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